Feb 2 2016
The II-VI Laser Enterprise Division of II-VI Incorporated, a leading provider of high-power semiconductor laser components, today unveiled a new generation of high power 1060 nm single-mode laser diode seed module.
The new II-VI laser diode module is designed to seed nanosecond pulsed fiber lasers addressing the fast-growing market for MOPA (master oscillator power amplifier) fiber lasers. The innovative module delivers kink-free power up to 1.5 W in nanosecond pulse operations, enabling highly-efficient pulse amplification and improved frequency conversion for the best beam quality and throughput in fiber laser systems.
“With 40 percent more pulse power compared to our previous offering, our new diode seed module enables the next generation fiber laser systems for a wide range of applications,” said Karlheinz Gulden, General Manager, II-VI Laser Enterprise. “Together with our distributed feedback laser diode module designed for sub-nanosecond operations, we offer customers the most comprehensive seed laser diode portfolio in the market.”
The II-VI laser diode seed module features a higher power 1060 nm Fabry-Perot single-mode laser diode chip and a standard cooled telecom 10-pin mini butterfly type package that includes a thermistor and back-facet monitor photodiode. The 75% smaller form factor of the mini butterfly package versus the legacy 14-pin version enables a reduction of overall footprint of the seed assembly. A broad- or narrow-band Fiber Bragg Grating is optionally available to control the spectral properties for the suppression of Stimulated Brillouin Scattering (SBS) or for the improvement of frequency conversion performance, respectively.