Feb 11 2008
OmniVision Technologies, Inc., the world's largest supplier of CMOS image sensors, today announced its OmniPixel3-HS(TM) architecture, which incorporates a new pixel design that doubles the sensitivity of its 1.75 micron OmniPixel3(TM) architecture to 960 millivolts per lux-second. The performance of the new OmniPixel3-HS architecture significantly enhances image capture under very low lighting conditions, and thus allows for a new generation of compact camera solutions for mobile handsets, notebook computers and other applications that require exceptional low-light performance without the need for flash.
"Our R&D team engaged in a focused effort with technology partner TSMC to move more advanced design rules into the current 0.11-micron image technology to support this new pixel architecture," said Howard Rhodes, OmniVision's Vice President of Process Engineering. "OmniVision has systematically analyzed the performance of over 100 different pixel designs over 100 different process variations to arrive at the OmniPixel3-HS design. The result is an OmniVision proprietary image technology that doubles the sensitivity of our first generation OmniPixel3 1.75 micron pixel."
OmniPixel3-HS is a symmetric pixel design that eliminates color shading across the image plane. Combined with a low stack height, the OmniPixel3-HS pixel delivers a sharp, clear and accurate color image across the entire image plane. The new pixel cuts fundamental noise sources in half, significantly increasing the internal pixel gain and the quantum efficiency to provide a sensor with much superior low light performance and improved performance in all lighting conditions.
OmniVision will be demonstrating several new products incorporating its OmniPixel3-HS architecture at the Mobile World Congress (Hall 1, booth 1G13) in Barcelona, February 11-14, 2008.