Dec 9 2010
Hamamatsu Photonics announced that it has introduced a new range of Full Frame Transfer CCD (FFT-CCD) imaging sensors that feature very high sensitivity in the near-infrared (NIR) spectrum.
The S11510 imaging sensors use the company’s distinct technology in laser processing to develop a MEMS structure on the CCD’s back side. This facilitates in generating a very high sensitivity at wavelengths greater than 800 nm.
S11510 Imaging Sensors
The S11510 imaging sensors have a quantum efficacy of 40% at a wavelength of 40 nm, without requiring a deep depletion structure. They come in 2,048 or 1,024 pixels, with each of them measuring 14 by 14 µm.
The S11510 series also has the potential to be utilized as an imaging sensor with an extended active region present in the sensor height direction. The imaging sensors also have low etalation, which is a frequent problem in Raman applications.
The S11510 imaging sensors are similar in design, when compared to the conventional S10420-01 FFT-CCD. Both the devices are pin compatible and allow operation under identical drive conditions. This enhances the NIR sensitivity of the current imaging sensor or the spectrometer.