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Sumitomo Electric, Soitec to Develop GaN Substrates for HBLED Applications

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Reviewed

Dec 3 2010

Engineered substrate supplier, Soitec has collaborated with Sumitomo Electric Industries to develop gallium nitride (GaN) substrates for high brightness LED applications. Sumitomo Electric manufactures and designs optical fibers, components, cables and automotive parts.

Soitec's Smart Cut layer transfer technology and Sumitomo Electric's GaN wafer manufacturing technology will sbe used to transfer thin GaN layers from one GaN wafer to create the GaN substrates. The technology will result in extensive use of GaN substrates in various applications such as electric power tools for full electric and hybrid vehicles and high brightness LEDs.

The GM of Compound Semiconductor Material Division and Executive Officer at Sumitomo Electric, Masamichi Yokogawa stated that the partnership would result in producing cost-effective and high-quality GaN substrates. Yokogawa added that the joint association will also facilitate broad utilization of the GaN wafers.

Source:

http://www.soitec.com

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