Oct 11 2010
North Carolina State University researchers have discovered a way to combine gallium nitride (GaN) lasers with silicon-based computer chips.
The technique allows the integration of GaN sensors on silicon without using any buffer layers.
According to Pradeep Fulay from the National Science Foundation, the direct integration of semiconductor-based materials onto silicon chips is of significant interest as it can allow diverse capabilities including lasers. The National Science Foundation has funded the GaN research project.
Jay Narayan and Thomas Rawdanowicz had conducted the research. Narayan is a Professor of Materials Science and Engineering at North Carolina State University and co-holder of the patent technology, while Rawdanowicz is a former Ph.D. student at the North Carolina State University.
In addition, The National Science Foundation is funding further research in this field. A corporation, based in the U.S., is currently licensing the technology. Imec in Belgium has announced a similar project to study GaN/Si integration.
Narayan stated that the technology will help in developing high-power devices, which are necessary for producing high-frequency military communications and smart-grid technology.