Sep 13 2010
Developer of advanced semiconductor systems, Samsung Electronics, has rolled out two new CMOS imagers that utilize the back side illuminated pixel technology.
The S5K2N1 and the S5K4E5 CMOS imagers deliver exceptional performance even in low-light settings. The S5K2N1 is optimized for digital video cameras and digital still cameras, while the S5K4E5 is suitable for smartphones. The new CMOS imagers were demonstrated at the Samsung Mobile Solutions Forum in Taiwan.
S5K4E5 CMOS image sensor
The S5K2N1 is a 1.4 µ 14.6 megapixel CMOS image sensor that provides 30 frames per second (FPS) at full resolution and uses Samsung’s 90 nm logic process technology. The company provides a thermal enhanced plastic lead ceramic carrier package to decrease the heat produced from the CMOS imager.
The S5K4E5 is a 1.4 µ 5 megapixel image sensor that offers 30 frames per second at full resolution. It supports real-time video in full resolution. The 30 FPS capability in the S5K4E5 CMOS imager reduces the shot-to-shot lag time and allows the user to capture the image. The S5K4E5 features a wide chief ray angle that decreases the device’s package height.
Unlike the front side illumination technology, the back side illumination technology accumulates photons from the rear side of the pixel. In view of the reversed structure, the photodiode is moved to the top and results in enhanced photoelectric efficiency. Enhanced efficiency is obtained since the light does not get dispersed via the dielectric layers and metal wiring that normally cause photon loss. The issue of low-light sensitivity is resolved using the back side illumination technology.
The S5K4E5 and the S5K2N1 imagers provide 30% improvement in low-light sensitivity when compared to front side illumination imagers.