Sep 7 2010
Jenoptik Laser GmbH has released a new JenLas disk IR70 infrared disk laser for photovoltaics applications. The IR70 has been developed by Jenoptik's Lasers and Material Processing division. The infrared disk laser is specifically designed to meet the needs of latest technological developments in photovoltaics field including emitter wrap-through and metal wrap-through at a maximum of 20,000 holes/s.
Infrared Disk Laser
The Q-switched laser is suitable for a number of applications at the 1030 nm IR wavelength range, while the 65-W laser system is ideal for drilling the silicon wafers. The silicon wafers is required to manufacture back-contact solar cells.
The JenLas disk IR70 laser offers maximum throughput and high quality, and its pulse length can be adjusted irrespective of the repetition rate. The IR70 provides a linear polarization, a beam quality of M2 less than or equal to1.2, and an output power of greater than 65 W at 30 kHz. The laser beam's diameter is 1.4 mm, while the pulse energy is above 7 mJ at 8 kHz. The pulse repetition rate ranges from 8 to 30 kHz, while the typical pulse length varies from 650 to 1700 ns with respect to the repetition rate.
The cells' electrical efficiency can be improved by using the emitter wrap-through or metal wrap-through technology. In order to maximize the cells' active surface area, the contacts are placed from the cell's front side to the rear side. The contact fingers, which are normally used to cover the surface area, can be removed. The emitter wrap-through and metal wrap-through technologies can also be used in laser edge isolation, laser-fired contacts and long-distance wafer marking applications.