Aug 16 2010
Manufacturer of UVC LEDs (ultraviolet light emitting diodes), Crystal IS, and Asahi Kasei have signed an agreement to develop a manufacturing method based on the intellectual property of Crystal IS, for producing large diameter AIN (Aluminum Nitride) substrates. The Crystal IS plant, located in Green Island, New York, will be the location for the development of the process.
Aluminum Nitride Substrates
The Chief Executive Officer of Crystal IS, Dr. Steven Berger stated that AIN substrates are crucial for the UVC LEDs fabrication. He noted that adding on the intellectual property for developing large diameter substrates is a critical step towards long-term growth.
Asahi Kasei’s head of development for compound semiconductor business, Masafumi Nakao, said that the company is pleased to invest $2 million in Crystal IS and its wafer technology. He added that Asahi Kasei is examining the market potential of the AIN substrates for LEDs and other applications.