Vishay Intertechnology has launched new silicon PIN photodiodes to expand its optoelectronics portfolio. The high-speed photodiodes have high radiant sensitivity, and switching time is also faster.
TEFD4300
They are available in black- and clear-epoxy T1 plastic packages. A 20° angle of half sensitivity and 17 µA of high reverse photo current are featured in the TEFD4300F and TEFD4300 photodiodes.
The devices are suitable for encoders, photo interrupters, transmitting data, position sensors and optical switches in metering applications. The TEFD4300 photodiode is a clear epoxy device for visible and infrared light sources and the sensitivity ranges from 350 to 1120 nm, while the TEFD4300F photodiode is a black epoxy device for the infrared light with the wavelength ranging from 770 to 1070 nm. The latter uses a daylight blocking filter that matches with IR emitters, whose wavelength ranges from 850 to 950 nm.
Switching times are faster in these high-speed photodiodes at a temperature range of −40 °C to + 100 °C, peak sensitivity with wavelength of 950 nm along with low load resistor values and a low 0.1 %/K temperature coefficient of light current. The packaged photodiodes complement the TSAL4400, TSUS4300 and VSLB3940 IR emitter series. Lead-free processing compliant with WEEE 2002/96/EC and RoHS 2002/95/EC is supported by the photo detectors. These photodiodes also meet the company’s Green environmental requirements.