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RoseStreet Labs Develops InGaN on Silicon Technology-Based Green and Longer Wavelength LEDs

RoseStreet Labs has demonstrated its longer-wavelength LED equipment utilizing inexpensive silicon wafer substratres. The device, first of its kind in the world, would assist the growth of the worldwide LED market where cost-effectiveness, energy efficacy and miniaturization are important product properties.

Green and Longer Wavelength LED

RoseStreet Labs used its own thin-film InGaN on silicon technology for the development of the device by employing its industrial scale deposition tools at its Nitride Research Center located in Phoenix. Silicon substrates are cheaper than conventional silicon carbide or sapphire substrates normally used in LED production.

The effective long wavelength LEDs are a major landmark in the development of LED backlighting, solid state lighting and future-generation display technology. The production of longer or green wavelength InGaN-based LEDs is more difficult than that of the blue and ultraviolet LEDs due to the reduction in quantum efficacies.

RoseStreet Labs intends to handover the packaging of its longer and green wavelength LEDs to its sister concern, FlipChip International, which has vast knowledge in packaging semiconductor power equipment. FlipChip International proposes to offer an innovative packaging solution for the longer-wavelength LED equipment.

The researchers at RoseStreet Labs have also illustrated the longer-wavelength LED technology’s initial tunability to white light and multi-color spectrums. Low power usage, high intensity and the potential for low cost of production are the prospects of the LED technology. The company expects commercializing the technology in two to three years with shift to silicon substrates of 200 mm.

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