Feb 9 2011
Vishay Intertechnology, manufacturer of semiconductor solutions, has introduced a new infrared emitter based on the surface emitter chip technology.
VSLY5850 Infrared Emitter
The VSLY5850 infrared emitter features a parabolic lens for a 3º angle of half intensity. The device has a wavelength of 850 nm and provides swift switching times of 10 ns, and radiant intensity of 600 mW/sr at a drive current of 100 mA.
The infrared emitter’s high radiant intensity enables substantial intensities to be attained at low drive currents. This decreases the power consumption significantly and extends the life of the device in infrared applications. The VSLY5850 infrared emitter is ideal IR illumination in smoke detectors, fire alarm systems, and CMOS cameras. Its swift switching times make it suitable for high modulation frequency applications.
The device is free of halogen and complies with RoHS directive 2002/95/EC specifications. The operating temperature of the device ranges between - 40 °C and + 85 °C and is ideal for high pulse current operation. The device’s surface emitter technology decreases the side emissions out of the 5 mm T1-3/4 plastic package and offers a well-directed emission beam for the user.