Feb 26 2015
CEA-Leti will present updates on its silicon photonics technology, including its results on “heterogeneously integrated III-V on silicon distributed feedback lasers at 1310nm” and hybridization of electronic and photonic ICs at OFC 2015, March 22-26, at the Los Angeles Conference Center in Los Angeles, Calif.
In addition, Hughes Metras, Leti’s vice president for strategic partnerships, North America, will participate in a panel discussion on “State of the Market/Industry: 2014 in Review,” beginning at 12:30 p.m. on March 24 in the Exhibit Hall. His topic is “The Promises of Silicon Photonics: Current Status and Future Trends.”
Leti staff will be available at booth No. 635 in the Exhibit Hall to elaborate on the results and answer questions.
Leti will be joined by AEPI, Invest in Grenoble-Isere. AEPI provides complimentary information, introductions and services to assist companies in exploring business opportunities in the Grenoble area of France.
The silicon photonics results will be presented in two presentations at the conference:
Monday, March 23, 4:30 p.m.
Room 411
Session: DSP-based Optical Access
Within the frame of the FABULOUS EU project, Leti has developed photonics ICs and integrated them with electronics ICs from STMicroelectronics by means of 3D micro-bumps. The FABULOUS project aims at demonstrating the effectiveness of a self-coherent reflective FDMA WDM PON architecture, achieving record transmission performances and demonstrating an ONU made up with CMOS electronic ICs and silicon photonic ICs.
Tuesday, March 24, 6 p.m.
Room 409AB
Session: Lasers & Multiwavelength Transmitters
Title: “Heterogeneously Integrated III-V on Silicon Distributed Feedback Lasers at 1310nm”
Within the frame of the IRT-Nanoelec French Program, CEA-Leti develops and matures the heterogeneous III-V/ Si integration technology and edge lasers and modulators based on it: this paper will present the performances of hybrid III-V on silicon distributed feedback lasers at 1310nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side- mode suppression ratio above 55 dB is measured.
In addition, Leti will present a poster at 10 a.m. on Wednesday, March 25, in the Exhibit Hall. As advanced modulation formats are considered for implementation in the next generation-transceivers for short transmissions, Leti has developed test bench for OFDM-direct detection and PAM transmissions. The poster will report on a PAM-4 transmission established by modulating a Si-RRM with a 2Vpp driving voltage. A 20Gb/s bit-rate was achieved with an 8GHz bandwidth, and maintained while the Si-chip temperature was varied from 35°C to 90°C.
Event contacts at Leti:
Sylvie Menezo
Head of Silicon Photonics Activities and the French IRT-Nanoelec Program, Partnerships and Business Development
Email: [email protected]
Tel: +33 684 822 764
Hughes Metras (In U.S.)
VP Strategic Partnership, North America
Email: [email protected]
Tel: +1 626 537 7270